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JANS2N6193

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JANS2N6193

TRANS PNP 100V 5A TO39

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANS2N6193 is a PNP bipolar junction transistor (BJT) designed for demanding applications. This military-grade component, qualified to MIL-PRF-19500/561, offers a continuous collector current (Ic) capability of up to 5 A and a collector-emitter breakdown voltage (Vce) of 100 V. With a maximum power dissipation of 1 W and a minimum DC current gain (hFE) of 60 at 2 A and 2 V, the JANS2N6193 exhibits a Vce(sat) of 1.2 V at 500 mA collector current and 5 A collector current. It features a low collector cutoff current (Icbo) of 100 µA. Packaged in a TO-39 (TO-205AD) metal can for through-hole mounting, this device operates across a wide temperature range of -65°C to 200°C. Its robust specifications make it suitable for applications in aerospace, defense, and industrial control systems requiring high reliability.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.2V @ 500mA, 5A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 2A, 2V
Frequency - Transition-
Supplier Device PackageTO-39 (TO-205AD)
GradeMilitary
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max1 W
QualificationMIL-PRF-19500/561

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