JANS2N5667S
TRANS NPN 300V 5A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANS2N5667S is an NPN bipolar junction transistor designed for high-reliability applications. This through-hole device, housed in a TO-39 (TO-205AD) metal can package, offers a collector-emitter breakdown voltage of 300V and a continuous collector current of up to 5A. It features a maximum power dissipation of 1.2W and a minimum DC current gain (hFE) of 25 at 1A collector current and 5V collector-emitter voltage. The transistor exhibits a Vce(sat) of 1V at 1A collector current and 1A base current. With a military grade qualification per MIL-PRF-19500/455 and an operating temperature range of -65°C to 200°C, this component is suitable for demanding environments found in aerospace and defense systems. The JANS2N5667S is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 1A, 5A |
| Current - Collector Cutoff (Max) | 200nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 1A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 1.2 W |
| Qualification | MIL-PRF-19500/455 |
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