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JANS2N5667S

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JANS2N5667S

TRANS NPN 300V 5A TO39

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANS2N5667S is an NPN bipolar junction transistor designed for high-reliability applications. This through-hole device, housed in a TO-39 (TO-205AD) metal can package, offers a collector-emitter breakdown voltage of 300V and a continuous collector current of up to 5A. It features a maximum power dissipation of 1.2W and a minimum DC current gain (hFE) of 25 at 1A collector current and 5V collector-emitter voltage. The transistor exhibits a Vce(sat) of 1V at 1A collector current and 1A base current. With a military grade qualification per MIL-PRF-19500/455 and an operating temperature range of -65°C to 200°C, this component is suitable for demanding environments found in aerospace and defense systems. The JANS2N5667S is supplied in bulk packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 1A, 5A
Current - Collector Cutoff (Max)200nA
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 1A, 5V
Frequency - Transition-
Supplier Device PackageTO-39 (TO-205AD)
GradeMilitary
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)300 V
Power - Max1.2 W
QualificationMIL-PRF-19500/455

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