JANS2N5666U3/TR
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JANS2N5666U3-TR is a high-reliability NPN bipolar junction transistor designed for demanding applications. This surface mount device, supplied in U3 packaging on tape and reel, offers a 200V collector-emitter breakdown voltage and a continuous collector current capability of 5A. With a maximum power dissipation of 1.2W and a saturation voltage of 1V at 1A collector current and 1A base current, it ensures efficient power handling. The minimum DC current gain (hFE) is 40 at 1A collector current and 5V collector-emitter voltage. Its robust operating temperature range of -65°C to 200°C makes it suitable for use in aerospace, defense, and industrial control systems requiring dependable performance under extreme conditions.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 1A, 5A |
| Current - Collector Cutoff (Max) | 200nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 1A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | U3 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 200 V |
| Power - Max | 1.2 W |
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