JANS2N5666S
TRANS NPN 200V 5A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANS2N5666S is an NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a maximum collector emitter breakdown voltage of 200 V and a continuous collector current capability of 5 A. With a power dissipation rating of 1.2 W and a wide operating temperature range of -65°C to 200°C, it is suitable for use in military and industrial environments. The transistor exhibits a minimum DC current gain (hFE) of 40 at 1 A collector current and 5 V collector emitter voltage. Saturation voltage is specified at 1 V for a base current of 1 A and collector current of 5 A. The JANS2N5666S is housed in a TO-39 (TO-205AD) metal can package, facilitating through-hole mounting. Its qualification under MIL-PRF-19500/455 underscores its reliability for critical systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 1A, 5A |
| Current - Collector Cutoff (Max) | 200nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 1A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 200 V |
| Power - Max | 1.2 W |
| Qualification | MIL-PRF-19500/455 |