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JANS2N5666

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JANS2N5666

TRANS NPN 200V 5A TO5

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANS2N5666 is an NPN Bipolar Junction Transistor (BJT) rated for 200V collector-emitter breakdown voltage and 5A continuous collector current. This military-grade component, manufactured to MIL-PRF-19500/455 standards, features a maximum power dissipation of 1.2W and a minimum DC current gain (hFE) of 40 at 1A, 5V. The saturation voltage (Vce Sat) is a maximum of 1V at 1A, 5A. It is housed in a TO-205AA (TO-5-3 Metal Can) package suitable for through-hole mounting, with an operating temperature range of -65°C to 200°C. This device is commonly utilized in high-reliability applications within the aerospace and defense sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AA, TO-5-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 1A, 5A
Current - Collector Cutoff (Max)200nA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 1A, 5V
Frequency - Transition-
Supplier Device PackageTO-5AA
GradeMilitary
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)200 V
Power - Max1.2 W
QualificationMIL-PRF-19500/455

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