JANS2N5666
TRANS NPN 200V 5A TO5Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANS2N5666 is an NPN Bipolar Junction Transistor (BJT) rated for 200V collector-emitter breakdown voltage and 5A continuous collector current. This military-grade component, manufactured to MIL-PRF-19500/455 standards, features a maximum power dissipation of 1.2W and a minimum DC current gain (hFE) of 40 at 1A, 5V. The saturation voltage (Vce Sat) is a maximum of 1V at 1A, 5A. It is housed in a TO-205AA (TO-5-3 Metal Can) package suitable for through-hole mounting, with an operating temperature range of -65°C to 200°C. This device is commonly utilized in high-reliability applications within the aerospace and defense sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 1A, 5A |
| Current - Collector Cutoff (Max) | 200nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 1A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 200 V |
| Power - Max | 1.2 W |
| Qualification | MIL-PRF-19500/455 |