JANS2N5339U3
TRANS NPN 100V 5A SMD5Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANS2N5339U3 is a high-reliability NPN bipolar junction transistor designed for demanding applications. This component offers a collector-emitter breakdown voltage of 100V and a continuous collector current capability of 5A, with a maximum power dissipation of 1W. It features a minimum DC current gain (hFE) of 60 at 2A and 2V. The JANS2N5339U3 is specified for operation across an extended temperature range of -65°C to 200°C, reflecting its military-grade qualification under MIL-PRF-19500/560. The device is supplied in a 5-SMD package, suitable for surface mounting. Applications for this transistor include power switching and amplification in aerospace and defense systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 5-SMD |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 2A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | SMD5 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/560 |