JANS2N5153U3/TR
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANS2N5153U3-TR is a PNP bipolar junction transistor designed for demanding applications. This military-grade component offers a collector-emitter breakdown voltage of 80 V and a continuous collector current capability of up to 2 A. With a maximum power dissipation of 1.16 W and a junction temperature range of -65°C to 200°C, it is suitable for operation in harsh environments. The transistor exhibits a minimum DC current gain (hFE) of 70 at 2.5 A and 5 V, with a Vce saturation of 1.5 V at 500 mA and 5 A. Its surface mount U3 package is supplied on tape and reel, adhering to MIL-PRF-19500/545 qualification standards. This device finds application in aerospace, defense, and high-reliability industrial systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 2.5A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | U3 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1.16 W |
| Qualification | MIL-PRF-19500/545 |
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