JANS2N5153L
TRANS PNP 80V 2A TO5Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANS2N5153L is a PNP bipolar junction transistor (BJT) designed for high-reliability applications. This component features a collector-emitter breakdown voltage (Vce) of 80V and a maximum continuous collector current (Ic) of 2A. It offers a minimum DC current gain (hFE) of 70 at 2.5A collector current and 5V collector-emitter voltage. The transistor is rated for a maximum power dissipation of 1W and has a saturation voltage (Vce(sat)) of 1.5V at 500mA base current and 5A collector current. The JANS2N5153L utilizes a TO-205AA (TO-5-3 Metal Can) through-hole package. This device is qualified to MIL-PRF-19500/545, indicating its suitability for military and demanding industrial environments. Typical applications include power switching and amplification in aerospace and defense systems. The operating junction temperature range is -65°C to 200°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 2.5A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/545 |
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