JANS2N5151L
TRANS PNP 80V 2A TO5Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JANS2N5151L is a PNP bipolar junction transistor (BJT) designed for demanding applications requiring high reliability and performance. This component features a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 2A, with a maximum power dissipation of 1W. The JANS2N5151L offers a minimum DC current gain (hFE) of 30 at 2.5A and 5V, and a saturation voltage (Vce Sat) of 1.5V at 500mA and 5A. Qualified to MIL-PRF-19500/545, this transistor is suitable for military, aerospace, and industrial sectors demanding robust performance under extreme environmental conditions, operating across a temperature range of -65°C to 200°C. It is supplied in a TO-205AA (TO-5-3 Metal Can) package and is available in bulk packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 2.5A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/545 |
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