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JANS2N5151

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JANS2N5151

TRANS PNP 80V 2A TO39

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANS2N5151 is a PNP bipolar junction transistor (BJT) designed for high-reliability applications. This through-hole component, housed in a TO-39 (TO-205AD) metal can package, offers a collector-emitter breakdown voltage of 80V and a continuous collector current capability of up to 2A. With a maximum power dissipation of 1W and a junction temperature range of -65°C to 200°C, it meets stringent military specifications per MIL-PRF-19500/545. Key electrical parameters include a minimum DC current gain (hFE) of 30 at 2.5A and 5V, and a saturation voltage (Vce Sat) of 1.5V at 500mA and 5A. The JANS2N5151 is suitable for demanding environments in aerospace, defense, and industrial control systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 500mA, 5A
Current - Collector Cutoff (Max)50µA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 2.5A, 5V
Frequency - Transition-
Supplier Device PackageTO-39 (TO-205AD)
GradeMilitary
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max1 W
QualificationMIL-PRF-19500/545

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