JANS2N5151
TRANS PNP 80V 2A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANS2N5151 is a PNP bipolar junction transistor (BJT) designed for high-reliability applications. This through-hole component, housed in a TO-39 (TO-205AD) metal can package, offers a collector-emitter breakdown voltage of 80V and a continuous collector current capability of up to 2A. With a maximum power dissipation of 1W and a junction temperature range of -65°C to 200°C, it meets stringent military specifications per MIL-PRF-19500/545. Key electrical parameters include a minimum DC current gain (hFE) of 30 at 2.5A and 5V, and a saturation voltage (Vce Sat) of 1.5V at 500mA and 5A. The JANS2N5151 is suitable for demanding environments in aerospace, defense, and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 2.5A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/545 |
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