JANS2N5004
TRANS NPN 80V 5A TO59Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANS2N5004 is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This component features a collector-emitter breakdown voltage of 80V and a maximum continuous collector current of 5A, with a power dissipation of 2W. The minimum DC current gain (hFE) is 70 at 2.5A and 5V. It offers a low collector cutoff current of 50µA and a Vce saturation of 1.5V at 500mA collector current. The JANS2N5004 is housed in a TO-59 stud mount package, suitable for demanding thermal environments. This device meets the stringent qualification requirements of MIL-PRF-19500/534, making it appropriate for military and aerospace applications. The operating temperature range is -65°C to 200°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-210AA, TO-59-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 2.5A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-59 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 2 W |
| Qualification | MIL-PRF-19500/534 |
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