JANS2N4449
TRANS NPN 20V TO46Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANS2N4449 is a high-reliability NPN bipolar junction transistor (BJT) designed for demanding applications. This JANS-qualified component, adhering to MIL-PRF-19500/317, offers a collector-emitter breakdown voltage of 20V and a maximum power dissipation of 360mW. The device features a minimum DC current gain (hFE) of 20 at 100mA and 1V, with a Vce saturation of 450mV at 10mA and 100mA. Operating within a temperature range of -65°C to 200°C, the JANS2N4449 is packaged in a TO-46 (TO-206AB) metal can, suitable for through-hole mounting. Its low collector cutoff current of 400nA makes it suitable for precision analog circuits. This component finds application in aerospace, defense, and industrial systems requiring robust and reliable transistor performance.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AB, TO-46-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 400nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 100mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-46 (TO-206AB) |
| Grade | Military |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 360 mW |
| Qualification | MIL-PRF-19500/317 |
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