JANS2N4150S
TRANS NPN 70V 10A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANS2N4150S is an NPN bipolar junction transistor designed for demanding applications. This component features a 70V collector-emitter breakdown voltage and a maximum collector current of 10A. With a minimum DC current gain (hFE) of 40 at 5A and 5V, it offers robust amplification characteristics. The transistor dissipates up to 1W and has a Vce(sat) of 2.5V at 1A collector current and 10A base current. Operating across a wide temperature range of -65°C to 200°C, the JANS2N4150S is housed in a TO-39 (TO-205AD) metal can package, suitable for through-hole mounting. This device meets military specifications per MIL-PRF-19500/394 qualification, making it suitable for aerospace, defense, and other high-reliability industrial systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 1A, 10A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 5A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 70 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/394 |
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