JANS2N4150
TRANS NPN 70V 10A TO5Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANS2N4150 is a military-grade NPN bipolar junction transistor (BJT) packaged in a TO-5 metal can (TO-205AA). This component is rated for a maximum collector-emitter breakdown voltage of 70V and a continuous collector current of 10A. It offers a minimum DC current gain (hFE) of 40 at 5A collector current and 5V collector-emitter voltage. The transistor has a maximum power dissipation of 1W and a collector cutoff current of 10µA. Vce(sat) is specified at 2.5V maximum for 1A base current and 10A collector current. The JANS2N4150 operates across a wide temperature range of -65°C to 200°C and meets MIL-PRF-19500/394 qualification. This device is suitable for applications in aerospace, defense, and industrial sectors demanding high reliability.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 1A, 10A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 5A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 70 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/394 |