JANS2N4033UB
TRANS PNP 80V 1A UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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The Microchip Technology JANS2N4033UB is a PNP bipolar junction transistor (BJT) designed for high-reliability applications. This military-grade component offers a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 1A. It features a maximum power dissipation of 500mW and a DC current gain (hFE) of at least 100 at 100mA and 5V. The transistor exhibits a Vce(sat) of 1V at 100mA and 1A, with a collector cutoff current (ICBO) of 10µA maximum. Operating across an extended temperature range of -65°C to 200°C, the JANS2N4033UB is housed in a 4-SMD, No Lead (UB) package, suitable for surface mounting. Its MIL-PRF-19500/512 qualification underscores its suitability for demanding environments, commonly found in aerospace and defense systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/512 |