JANS2N4033
TRANS PNP 80V 1A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANS2N4033 is a PNP bipolar junction transistor (BJT) designed for demanding applications. This military-grade component, qualified to MIL-PRF-19500/512, offers a continuous collector current of 1 A and a collector-emitter breakdown voltage of 80 V. The JANS2N4033 features a minimum DC current gain (hFE) of 100 at 100 mA and 5 V, with a Vce(sat) of 1 V at 1 A collector current and 100 mA base current. It exhibits a low collector cutoff current (ICBO) of 10 µA. The device is housed in a TO-39 (TO-205AD) metal can package, suitable for through-hole mounting. Its robust construction and wide operating temperature range of -55°C to 200°C make it a reliable choice for aerospace, defense, and industrial control systems. The maximum power dissipation is 800 mW.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/512 |