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JANS2N4029

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JANS2N4029

TRANS PNP 80V 1A TO18

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANS2N4029 is a PNP bipolar junction transistor (BJT) designed for demanding applications. This military-grade component, qualified to MIL-PRF-19500/512, features a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 1A. With a maximum power dissipation of 500mW, it is packaged in a TO-18 (TO-206AA) metal can for through-hole mounting. The device exhibits a minimum DC current gain (hFE) of 100 at 100mA and 5V, with a saturation voltage (Vce Sat) of 1V at 100mA collector current and 1A base current. It is suitable for operation across a wide temperature range from -55°C to 200°C. This transistor finds utility in aerospace, defense, and high-reliability industrial systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-206AA, TO-18-3 Metal Can
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 100mA, 1A
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 5V
Frequency - Transition-
Supplier Device PackageTO-18 (TO-206AA)
GradeMilitary
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max500 mW
QualificationMIL-PRF-19500/512

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