JANS2N3867S
TRANS PNP 40V 0.003A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANS2N3867S is a PNP bipolar junction transistor (BJT) designed for demanding applications. This component features a collector-emitter breakdown voltage of 40V and a maximum collector current of 3mA. It offers a minimum DC current gain (hFE) of 40 at 1.5A collector current and 2V collector-emitter voltage. The transistor is rated for a maximum power dissipation of 1W and operates within a junction temperature range of -65°C to 200°C. The JANS2N3867S is supplied in a TO-39 (TO-205AD) metal can package, suitable for through-hole mounting. This device meets MIL-PRF-19500/350 qualification standards, indicating its suitability for military and high-reliability applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 250mA, 2.5A |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 1.5A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 3 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/350 |