JANS2N3737UB/TR
TRANS NPN 40V 1.5A UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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The Microchip Technology JANS2N3737UB-TR is a high-performance NPN bipolar junction transistor designed for demanding applications. This military-grade component, qualified to MIL-PRF-19500/395, offers a collector-emitter breakdown voltage of 40V and a continuous collector current capability of 1.5A. With a maximum power dissipation of 500mW and an operating temperature range of -65°C to 200°C, it is suitable for environments requiring robust performance. The DC current gain (hFE) is a minimum of 20 at 1A and 1.5V, with a Vce(sat) of 900mV at 100mA and 1A. This transistor is presented in a UB package for surface mounting and is supplied on tape and reel (TR). Its specifications make it a reliable choice for use in aerospace and defense systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 900mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 1A, 1.5V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/395 |