JANS2N3737UB
TRANS NPN 40V 1.5A UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANS2N3737UB is an NPN bipolar junction transistor designed for demanding applications. This device features a collector-emitter breakdown voltage of 40V and a maximum collector current of 1.5A. With a power dissipation of 500mW and a minimum DC current gain (hFE) of 20 at 1A and 1.5V, it offers robust performance. The Vce(sat) is specified at a maximum of 900mV at 100mA and 1A. Operating across a temperature range of -65°C to 200°C, this MIL-PRF-19500/395 qualified component is suitable for military and aerospace sectors. Packaged in a 4-SMD, No Lead UB configuration for surface mounting, it is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 900mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 1A, 1.5V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/395 |