JANS2N3737
TRANS NPN 40V 1.5A TO46Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANS2N3737 is an NPN bipolar junction transistor designed for high-reliability applications. This military-grade device, qualified to MIL-PRF-19500/395, features a 40V collector-emitter breakdown voltage and a maximum collector current of 1.5A. With a minimum DC current gain (hFE) of 40 at 500mA and 1V, and a saturation voltage of 900mV at 100mA and 1A, it offers robust performance characteristics. The transistor has a maximum power dissipation of 500mW and operates within an extended temperature range of -65°C to 200°C (TJ). Packaged in a TO-46 metal can (TO-206AB, TO-46-3), this through-hole component is suitable for demanding environments in aerospace, defense, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AB, TO-46-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 900mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 200nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 500mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-46 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/395 |
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