JANS2N3735
TRANS NPN 40V 1.5A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANS2N3735 is an NPN bipolar junction transistor designed for demanding applications. This component features a 40V collector-emitter breakdown voltage and a continuous collector current capability of 1.5A, with a maximum power dissipation of 1W. The JANS2N3735 offers a minimum DC current gain (hFE) of 20 at 1A collector current and 1.5V collector-emitter voltage. Its saturation voltage (Vce Sat) is specified at a maximum of 900mV with 100mA base current and 1A collector current. The device exhibits a low collector cutoff current of 10µA (ICBO) and operates across a wide temperature range of -65°C to 200°C. Qualified to MIL-PRF-19500/395, this transistor is housed in a TO-39 (TO-205AD) metal can package suitable for through-hole mounting. Its robust construction and specifications make it suitable for use in aerospace, defense, and industrial equipment requiring high reliability.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 900mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 1A, 1.5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/395 |
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