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JANS2N3700

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JANS2N3700

TRANS NPN 80V 1A TO18

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANS2N3700 is a military-grade NPN bipolar junction transistor (BJT) housed in a TO-18 (TO-206AA) metal can package. This component offers a maximum collector-emitter breakdown voltage of 80V and a continuous collector current rating of 1A. It features a minimum DC current gain (hFE) of 50 at 500mA collector current and 10V collector-emitter voltage. The device exhibits a saturation voltage (Vce(sat)) of 500mV maximum at 50mA base current and 500mA collector current, with a collector cutoff current (Icbo) of 10nA maximum. With a maximum power dissipation of 500mW, it operates across an extended temperature range of -65°C to 200°C. This transistor is qualified under MIL-PRF-19500/391 and is suitable for applications in aerospace, defense, and industrial sectors requiring high reliability and performance in demanding environments.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-206AA, TO-18-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)10nA
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 500mA, 10V
Frequency - Transition-
Supplier Device PackageTO-18 (TO-206AA)
GradeMilitary
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max500 mW
QualificationMIL-PRF-19500/391

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