JANS2N3700
TRANS NPN 80V 1A TO18Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JANS2N3700 is a military-grade NPN bipolar junction transistor (BJT) housed in a TO-18 (TO-206AA) metal can package. This component offers a maximum collector-emitter breakdown voltage of 80V and a continuous collector current rating of 1A. It features a minimum DC current gain (hFE) of 50 at 500mA collector current and 10V collector-emitter voltage. The device exhibits a saturation voltage (Vce(sat)) of 500mV maximum at 50mA base current and 500mA collector current, with a collector cutoff current (Icbo) of 10nA maximum. With a maximum power dissipation of 500mW, it operates across an extended temperature range of -65°C to 200°C. This transistor is qualified under MIL-PRF-19500/391 and is suitable for applications in aerospace, defense, and industrial sectors requiring high reliability and performance in demanding environments.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-18 (TO-206AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/391 |
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