JANS2N3637UB
TRANS PNP 175V 1A UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANS2N3637UB is a PNP bipolar junction transistor designed for demanding applications. This component features a 175V collector-emitter breakdown voltage and a 1A maximum collector current. With a power dissipation of 1.5W and a wide operating temperature range of -65°C to 200°C, it is suitable for harsh environments. The device offers a minimum DC current gain (hFE) of 100 at 50mA and 10V, and a Vce saturation of 600mV at 5mA and 50mA. The JANS2N3637UB is manufactured to MIL-PRF-19500/357 specifications, ensuring high reliability for aerospace and defense sectors. It is supplied in a UB package for surface mounting.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 175 V |
| Power - Max | 1.5 W |
| Qualification | MIL-PRF-19500/357 |
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