JANS2N3637L
TRANS PNP 175V 1A TO5Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JANS2N3637L is a PNP bipolar junction transistor designed for high-reliability applications. This military-grade component, qualified to MIL-PRF-19500/357, features a maximum collector current of 1 A and a collector-emitter breakdown voltage of 175 V. It offers a typical DC current gain (hFE) of 100 at 10 mA and 10 V, with a saturation voltage (Vce Sat) of 600 mV at 5 mA base current and 50 mA collector current. The transistor dissipates a maximum power of 1 W and operates over an extended temperature range of -65°C to 200°C (TJ). Packaged in a TO-205AA (TO-5-3 Metal Can) for through-hole mounting, the JANS2N3637L is suitable for demanding environments, including aerospace and defense systems. Its low collector cutoff current (ICBO) of 10 µA ensures minimal leakage in sensitive circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 175 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/357 |
Request a Quote
Clients Also Buy
2N5347
PNP TRANSISTORS
JANSP2N3439L
RH POWER BJT
JAN2N918
TRANS NPN 15V 0.05A TO72
