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JANS2N3637L

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JANS2N3637L

TRANS PNP 175V 1A TO5

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANS2N3637L is a PNP bipolar junction transistor designed for high-reliability applications. This military-grade component, qualified to MIL-PRF-19500/357, features a maximum collector current of 1 A and a collector-emitter breakdown voltage of 175 V. It offers a typical DC current gain (hFE) of 100 at 10 mA and 10 V, with a saturation voltage (Vce Sat) of 600 mV at 5 mA base current and 50 mA collector current. The transistor dissipates a maximum power of 1 W and operates over an extended temperature range of -65°C to 200°C (TJ). Packaged in a TO-205AA (TO-5-3 Metal Can) for through-hole mounting, the JANS2N3637L is suitable for demanding environments, including aerospace and defense systems. Its low collector cutoff current (ICBO) of 10 µA ensures minimal leakage in sensitive circuits.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AA, TO-5-3 Metal Can
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 50mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 10V
Frequency - Transition-
Supplier Device PackageTO-5AA
GradeMilitary
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)175 V
Power - Max1 W
QualificationMIL-PRF-19500/357

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