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JANS2N3637

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JANS2N3637

TRANS PNP 175V 1A TO39

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANS2N3637 is a PNP bipolar junction transistor (BJT) designed for demanding applications requiring high reliability. This component features a breakdown voltage of 175V and a continuous collector current capability of 1A, with a maximum power dissipation of 1W. The JANS2N3637 is qualified to MIL-PRF-19500/357, indicating its suitability for military and aerospace environments. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 50mA and 10V, and a collector-emitter saturation voltage (Vce(sat)) of 600mV at 5mA/50mA. The transistor operates within a temperature range of -65°C to 200°C and is housed in a TO-39 (TO-205AD) metal can package, facilitating through-hole mounting. This device is commonly utilized in power switching and linear amplification circuits within the defense and aerospace industries.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 50mA
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 50mA, 10V
Frequency - Transition-
Supplier Device PackageTO-39
GradeMilitary
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)175 V
Power - Max1 W
QualificationMIL-PRF-19500/357

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