JANS2N3635
TRANS PNP 140V 1A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANS2N3635 is a PNP bipolar junction transistor (BJT) with a collector-emitter breakdown voltage of 140V and a continuous collector current capability of 1A. This device offers a minimum DC current gain (hFE) of 100 at 50mA and 10V. The maximum power dissipation is rated at 1W. It features a Vce(sat) of 600mV at 5mA base current and 50mA collector current, with a collector cutoff current (Icbo) of 10µA. The JANS2N3635 is packaged in a TO-39 (TO-205AD) metal can for through-hole mounting and operates across an extended temperature range of -65°C to 200°C. This component meets the rigorous qualification standards of MIL-PRF-19500/357, making it suitable for demanding applications in aerospace and defense sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/357 |
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