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JANS2N3501UB

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JANS2N3501UB

TRANS NPN 150V 0.3A UB

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANS2N3501UB is a high-reliability, NPN bipolar junction transistor designed for demanding applications. This device features a 150V collector-emitter breakdown voltage and a continuous collector current capability of 300mA, with a maximum power dissipation of 500mW. The JANS2N3501UB offers a guaranteed minimum DC current gain (hFE) of 100 at 150mA and 10V, and a Vce(sat) of 400mV at 15mA/150mA. Operating over an extended temperature range of -65°C to 200°C, this component meets rigorous military specifications, including MIL-PRF-19500/366 qualification. The UB package (4-SMD, No Lead) is suitable for surface mounting. This transistor finds application in various military and aerospace systems requiring robust performance.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case4-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic400mV @ 15mA, 150mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageUB
GradeMilitary
Current - Collector (Ic) (Max)300 mA
Voltage - Collector Emitter Breakdown (Max)150 V
Power - Max500 mW
QualificationMIL-PRF-19500/366

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