JANS2N3501UB
TRANS NPN 150V 0.3A UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANS2N3501UB is a high-reliability, NPN bipolar junction transistor designed for demanding applications. This device features a 150V collector-emitter breakdown voltage and a continuous collector current capability of 300mA, with a maximum power dissipation of 500mW. The JANS2N3501UB offers a guaranteed minimum DC current gain (hFE) of 100 at 150mA and 10V, and a Vce(sat) of 400mV at 15mA/150mA. Operating over an extended temperature range of -65°C to 200°C, this component meets rigorous military specifications, including MIL-PRF-19500/366 qualification. The UB package (4-SMD, No Lead) is suitable for surface mounting. This transistor finds application in various military and aerospace systems requiring robust performance.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/366 |
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