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JANS2N3501L

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JANS2N3501L

TRANS NPN 150V 0.3A TO5

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANS2N3501L is a high-reliability NPN Bipolar Junction Transistor (BJT) designed for demanding applications. This component features a collector-emitter breakdown voltage of 150 V and a continuous collector current rating of 300 mA, with a power dissipation of 1 W. The TO-205AA (TO-5-3 Metal Can) through-hole package facilitates robust mounting. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 150 mA collector current and 10 V collector-emitter voltage, and a Vce saturation of 400 mV at 15 mA base current and 150 mA collector current. Collector cutoff current (ICBO) is a maximum of 10 µA. This transistor meets stringent military specifications, qualified under MIL-PRF-19500/366, and operates across an extended temperature range of -65°C to 200°C. It finds application in aerospace, defense, and industrial systems requiring high performance and reliability.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AA, TO-5-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic400mV @ 15mA, 150mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageTO-5AA
GradeMilitary
Current - Collector (Ic) (Max)300 mA
Voltage - Collector Emitter Breakdown (Max)150 V
Power - Max1 W
QualificationMIL-PRF-19500/366

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