JANS2N3501L
TRANS NPN 150V 0.3A TO5Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANS2N3501L is a high-reliability NPN Bipolar Junction Transistor (BJT) designed for demanding applications. This component features a collector-emitter breakdown voltage of 150 V and a continuous collector current rating of 300 mA, with a power dissipation of 1 W. The TO-205AA (TO-5-3 Metal Can) through-hole package facilitates robust mounting. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 150 mA collector current and 10 V collector-emitter voltage, and a Vce saturation of 400 mV at 15 mA base current and 150 mA collector current. Collector cutoff current (ICBO) is a maximum of 10 µA. This transistor meets stringent military specifications, qualified under MIL-PRF-19500/366, and operates across an extended temperature range of -65°C to 200°C. It finds application in aerospace, defense, and industrial systems requiring high performance and reliability.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/366 |