JANS2N3501
TRANS NPN 150V 0.3A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANS2N3501 is a military-grade NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a 150V collector-emitter breakdown voltage and a maximum collector current of 300mA, with a power dissipation of 1W. The TO-39 (TO-205AD) metal can package facilitates through-hole mounting. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a saturation voltage (Vce(sat)) of 400mV at 15mA/150mA. Collector cutoff current (ICBO) is specified at a maximum of 10µA. Operating junction temperature ranges from -65°C to 200°C. This device is qualified under MIL-PRF-19500/366, making it suitable for aerospace, defense, and industrial systems requiring high reliability and performance.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/366 |