JANS2N3499UB/TR
SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
The Microchip Technology JANS2N3499UB-TR is an NPN bipolar junction transistor designed for demanding applications. This military-grade component, qualified to MIL-PRF-19500/366, offers a collector-emitter breakdown voltage of 100 V and a continuous collector current capability of up to 500 mA. With a maximum power dissipation of 1 W and a wide operating temperature range of -65°C to 200°C, it is suitable for use in aerospace and defense systems. The device exhibits a minimum DC current gain (hFE) of 100 at 150mA and 10V, with a Vce saturation of 600mV at 30mA and 300mA. Packaged in a 3-SMD, No Lead UB case and supplied on tape and reel, this surface-mount transistor is a robust solution for high-reliability circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/366 |
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