JANS2N3499UB
SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANS2N3499UB is a high-reliability NPN bipolar junction transistor designed for demanding applications. This surface-mount device, packaged in a UB (3-SMD, No Lead) configuration, offers a collector-emitter breakdown voltage of 100V and a continuous collector current capability of 500mA. With a maximum power dissipation of 1W and a wide operating temperature range from -65°C to 200°C, it is suitable for applications requiring robust performance in harsh environments. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a Vce(sat) of 600mV at 30mA and 300mA. The JANS2N3499UB meets MIL-PRF-19500/366 qualification, making it a reliable choice for aerospace, defense, and industrial systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/366 |
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