JANS2N3499L
TRANS NPN 100V 0.5A TO5Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANS2N3499L is an NPN bipolar junction transistor housed in a TO-205AA (TO-5-3 Metal Can) package, suitable for through-hole mounting. This component offers a collector-emitter breakdown voltage of 100V and a continuous collector current capability of 500mA. It features a minimum DC current gain (hFE) of 100 at 150mA and 10V. The transistor exhibits a maximum collector cutoff current (ICBO) of 10µA and a Vce saturation of 600mV at 30mA base current and 300mA collector current. Designed for military applications, this device adheres to MIL-PRF-19500/366 qualification and operates across a temperature range of -65°C to 200°C. The JANS2N3499L is utilized in various demanding electronic systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Qualification | MIL-PRF-19500/366 |