JANS2N3499
TRANS NPN 100V 0.5A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANS2N3499 is an NPN bipolar junction transistor with a collector-emitter breakdown voltage of 100 V and a continuous collector current capability of 500 mA. This device offers a power dissipation of 1 W and features a saturation voltage of 600 mV at 30 mA base current and 300 mA collector current. The minimum DC current gain (hFE) is specified as 100 at 150 mA collector current and 10 V collector-emitter voltage. The JANS2N3499 is qualified to MIL-PRF-19500/366 and operates across an extended temperature range of -65°C to 200°C. Supplied in a TO-39 (TO-205AD) metal can package, this military-grade component is suitable for applications in aerospace and defense systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/366 |
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