JANS2N3440L
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
The Microchip Technology JANS2N3440L is a military-grade NPN bipolar junction transistor (BJT) designed for high-reliability applications. This through-hole component, housed in a TO-205AA (TO-5-3 Metal Can) package, offers a collector-emitter breakdown voltage of 250V and a continuous collector current capability of 1A. With a maximum power dissipation of 800mW and a guaranteed minimum DC current gain (hFE) of 40 at 20mA collector current and 10V Vce, it provides robust performance. The device exhibits a low saturation voltage of 500mV at a base current of 4mA and collector current of 50mA, and a collector cutoff current of 2µA maximum. Qualified under MIL-PRF-19500/368, this component is suitable for use in aerospace, defense, and industrial systems requiring stringent performance and endurance.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA |
| Current - Collector Cutoff (Max) | 2µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/368 |
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