JANS2N3440
TRANS NPN 250V 1A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANS2N3440 is an NPN Bipolar Junction Transistor (BJT) designed for high-reliability applications. This military-grade component, qualified under MIL-PRF-19500/368, features a 250V collector-emitter breakdown voltage and a maximum continuous collector current of 1A. It offers a minimum DC current gain (hFE) of 40 at 20mA and 10V, with a saturation voltage (Vce(sat)) of 500mV at 4mA base current and 50mA collector current. The device dissipates a maximum power of 800mW and operates across a wide temperature range from -65°C to 200°C. Packaged in a TO-39 (TO-205AD) metal can, the JANS2N3440 is suitable for use in aerospace, defense, and industrial systems requiring robust performance and extreme temperature tolerance.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA |
| Current - Collector Cutoff (Max) | 2µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/368 |
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