JANS2N3439L
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANS2N3439L is an NPN bipolar junction transistor (BJT) designed for demanding applications, meeting MIL-PRF-19500/368 specifications. This through-hole component, housed in a TO-5AA (TO-205AA) metal can package, offers a collector-emitter breakdown voltage of 350 V and a continuous collector current capability of 1 A. With a maximum power dissipation of 800 mW, it exhibits a minimum DC current gain (hFE) of 40 at 20mA collector current and 10V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 500mV at 4mA base current and 50mA collector current, with a collector cutoff current (Icbo) of 2µA. Its wide operating temperature range of -55°C to 200°C makes it suitable for military, aerospace, and industrial systems requiring high reliability and performance.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA |
| Current - Collector Cutoff (Max) | 2µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/368 |