JANS2N3439
TRANS NPN 350V 1A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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The Microchip Technology JANS2N3439 is a high-reliability NPN bipolar junction transistor (BJT) designed for demanding applications. This component offers a collector-emitter breakdown voltage of 350V and a continuous collector current capability of 1A. It features a maximum power dissipation of 800mW, with a specified saturation voltage of 500mV at 4mA base current and 50mA collector current. The minimum DC current gain (hFE) is 40 at 20mA collector current and 10V collector-emitter voltage. This device, qualified to MIL-PRF-19500/368, is housed in a TO-39 (TO-205AD) metal can package suitable for through-hole mounting. It operates reliably across a wide temperature range of -65°C to 200°C. Typical applications include aerospace, defense, and industrial control systems requiring robust performance.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA |
| Current - Collector Cutoff (Max) | 2µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/368 |