JANS2N3057A
TRANS NPN 80V 1A TO46Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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The Microchip Technology JANS2N3057A is an NPN bipolar junction transistor (BJT) designed for military applications. This through-hole component features a TO-46 (TO-206AB) metal can package, facilitating robust thermal management and mechanical stability. It offers a collector-emitter breakdown voltage of 80V and a maximum continuous collector current of 1A, with a power dissipation rating of 500mW. Key electrical characteristics include a minimum DC current gain (hFE) of 50 at 500mA collector current and 10V collector-emitter voltage, and a saturation voltage (Vce(sat)) of 500mV at 50mA base current and 500mA collector current. The device exhibits a low collector cutoff current of 10nA and operates across an extended temperature range of -65°C to 200°C. This transistor is qualified to MIL-PRF-19500/391, indicating its suitability for demanding aerospace and defense systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AB, TO-46-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-46 (TO-206AB) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/391 |
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