JANS2N3019S
TRANS NPN 80V 1A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANS2N3019S is an NPN bipolar junction transistor designed for high-reliability applications. This military-grade component, qualified to MIL-PRF-19500/391, features a collector-emitter breakdown voltage of 80V and a continuous collector current capability of up to 1A. The device exhibits a minimum DC current gain (hFE) of 50 at 500mA and 10V, with a saturation voltage of 500mV at 50mA base current and 500mA collector current. The maximum collector cutoff current (ICBO) is 10µA. With a power dissipation of 800mW, it is housed in a TO-39 (TO-205AD) metal can package suitable for through-hole mounting. Operating temperature range is from -65°C to 200°C. This component finds application in various military and aerospace systems, as well as demanding industrial control and power switching circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/391 |
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