JANS2N3019
TRANS NPN 80V 1A TO5Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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The Microchip Technology JANS2N3019 is a high-reliability NPN bipolar junction transistor (BJT) designed for demanding applications. This military-grade component, qualified to MIL-PRF-19500/391, features a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 1A. With a maximum power dissipation of 800mW and a junction temperature range of -65°C to 200°C, it is suitable for use in aerospace, defense, and industrial control systems. The JANS2N3019 offers a minimum DC current gain (hFE) of 50 at 500mA and 10V, with a Vce(sat) of 500mV at 50mA/500mA. It is supplied in a TO-5 metal can package (TO-205AA) for through-hole mounting and is available in bulk packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/391 |
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