JANS2N2946A
SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JANS2N2946A is a PNP bipolar junction transistor (BJT) qualified to MIL-PRF-19500/382. This through-hole component features a maximum collector current (Ic) of 100 mA and a collector-emitter breakdown voltage (Vce) of 35 V. It offers a minimum DC current gain (hFE) of 50 at 1 mA and 500 mV. The transistor is housed in a TO-46 metal can package. With a maximum power dissipation of 400 mW and an operating temperature range of -65°C to 200°C, the JANS2N2946A is suitable for applications in defense and aerospace sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AB, TO-46-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 1mA, 500mV |
| Frequency - Transition | - |
| Supplier Device Package | TO-46 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 35 V |
| Power - Max | 400 mW |
| Qualification | MIL-PRF-19500/382 |
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