JANS2N2907AUBC
TRANS PNP 60V 0.6A UBCManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANS2N2907AUBC is a PNP bipolar junction transistor (BJT) designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 60V and can handle a continuous collector current of up to 600mA. The maximum power dissipation is 500mW. Key specifications include a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a typical collector cutoff current of 50nA. The saturation voltage (Vce Sat) is a maximum of 1.6V at 50mA base current and 500mA collector current. This device is manufactured to meet MIL-PRF-19500/291 qualification standards and operates across a wide temperature range from -65°C to 200°C. The UBC package is supplied in bulk packaging. This transistor is suitable for use in aerospace and defense applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-CLCC |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UBC |
| Grade | Military |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/291 |