JANS2N2907AUA
TRANS PNP 60V 0.6A UAManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
The Microchip Technology JANS2N2907AUA is a high-reliability PNP bipolar junction transistor (BJT) designed for demanding applications. Featuring a 60V collector-emitter breakdown voltage and a continuous collector current capability of 600mA, this device is suitable for general-purpose amplification and switching functions. Its UA package, a 4-SMD with no lead, enables efficient surface-mount assembly. The JANS designation signifies compliance with MIL-PRF-19500/291, indicating its suitability for military and aerospace environments. With a maximum power dissipation of 500mW and an operating temperature range of -65°C to 200°C, the JANS2N2907AUA offers robust performance under extreme conditions. Key parameters include a minimum DC current gain (hFE) of 100 at 1mA and 10V, and a collector cutoff current (Icbo) of 50nA. The saturation voltage (Vce(sat)) is a maximum of 1.6V at 50mA collector current and 50mA base current.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/291 |
Request a Quote
Clients Also Buy
JANSM2N2222AUB
RH SMALL-SIGNAL BJT
JANS2N3499UB
SMALL-SIGNAL BJT
BCY59-V111-HQ
SMALL-SIGNAL BJT
