JANS2N2907A
TRANS PNP 60V 0.6A TO206AAManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JANS2N2907A is a PNP bipolar junction transistor (BJT) designed for demanding applications requiring high reliability and performance. This through-hole component, housed in a TO-206AA (TO-18) metal can package, offers a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 600mA. It features a minimum DC current gain (hFE) of 100 at 150mA and 10V, with a saturation voltage (Vce(sat)) of 1.6V at 50mA collector current and 500mA base current. The transistor exhibits a low collector cutoff current of 50nA and a power dissipation of 500mW. Qualified to MIL-PRF-19500/291 and operating across a temperature range of -65°C to 200°C, the JANS2N2907A is suitable for military and aerospace systems, as well as high-reliability industrial and medical equipment.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-206AA (TO-18) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/291 |
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