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JANS2N2907A

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JANS2N2907A

TRANS PNP 60V 0.6A TO206AA

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANS2N2907A is a PNP bipolar junction transistor (BJT) designed for demanding applications requiring high reliability and performance. This through-hole component, housed in a TO-206AA (TO-18) metal can package, offers a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 600mA. It features a minimum DC current gain (hFE) of 100 at 150mA and 10V, with a saturation voltage (Vce(sat)) of 1.6V at 50mA collector current and 500mA base current. The transistor exhibits a low collector cutoff current of 50nA and a power dissipation of 500mW. Qualified to MIL-PRF-19500/291 and operating across a temperature range of -65°C to 200°C, the JANS2N2907A is suitable for military and aerospace systems, as well as high-reliability industrial and medical equipment.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-206AA, TO-18-3 Metal Can
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageTO-206AA (TO-18)
GradeMilitary
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max500 mW
QualificationMIL-PRF-19500/291

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