JANS2N2906AUB/TR
SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
The Microchip Technology JANS2N2906AUB-TR is a PNP bipolar junction transistor (BJT) designed for demanding applications. This military-grade component, qualified to MIL-PRF-19500/291, offers a collector-emitter breakdown voltage of 60 V and a maximum continuous collector current of 600 mA. With a power dissipation rating of 500 mW and a wide operating temperature range of -65°C to 200°C, it is suitable for use in aerospace, defense, and high-reliability industrial systems. The device features a minimum DC current gain (hFE) of 40 at 500 mA and 10 V. It is supplied in a UB package, a 3-SMD, No Lead surface mount configuration, presented on tape and reel (TR) for automated assembly. The collector cutoff current is specified at a maximum of 50 nA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 500mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/291 |
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