JANS2N2906AUB
TRANS PNP 60V 0.6A UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANS2N2906AUB is a PNP bipolar junction transistor featuring a 60V collector-emitter breakdown voltage and a 600mA maximum collector current. This military-grade component, qualified under MIL-PRF-19500/291, offers a minimum DC current gain (hFE) of 40 at 150mA and 10V. The transistor operates within an extended temperature range of -65°C to 200°C. It is provided in a UB package (4-SMD, No Lead) suitable for surface mounting and has a maximum power dissipation of 500mW. Applications for this device can be found in demanding aerospace and defense systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/291 |
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