JANS2N2905AL
TRANS PNP 60V 1UA TO5Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANS2N2905AL is a PNP bipolar junction transistor (BJT) designed for high-reliability applications. This military-grade component, qualified to MIL-PRF-19500/290, features a maximum collector-emitter breakdown voltage of 60V and a continuous collector current capability of 600mA. With a maximum power dissipation of 800mW, it is housed in a TO-205AA (TO-5-3 Metal Can) package for through-hole mounting. The device exhibits a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a collector cutoff current (Ic) of 1µA. Its saturation voltage (Vce(sat)) is a maximum of 1.6V at 50mA collector current and 50mA base current. This transistor is suitable for use in demanding industrial, aerospace, and defense systems requiring robust performance across an operating temperature range of -65°C to 200°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/290 |
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