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JANS2N2905A

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JANS2N2905A

TRANS PNP 60V 0.6A TO39

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANS2N2905A is a PNP bipolar junction transistor (BJT) designed for high-reliability applications. This device features a 60V collector-emitter breakdown voltage and a maximum continuous collector current of 600mA. With a power dissipation of 800mW and a transition frequency not specified, it is suitable for general-purpose amplification and switching in demanding environments. The JANS2N2905A is qualified to MIL-PRF-19500/290 and operates across an extended temperature range of -65°C to 200°C. It is supplied in a TO-39 metal can package, facilitating through-hole mounting. Key parameters include a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a Vce saturation of 1.6V at 50mA and 500mA. This component finds application in aerospace, defense, and industrial sectors requiring robust semiconductor performance.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageTO-39
GradeMilitary
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max800 mW
QualificationMIL-PRF-19500/290

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