JANS2N2905A
TRANS PNP 60V 0.6A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANS2N2905A is a PNP bipolar junction transistor (BJT) designed for high-reliability applications. This device features a 60V collector-emitter breakdown voltage and a maximum continuous collector current of 600mA. With a power dissipation of 800mW and a transition frequency not specified, it is suitable for general-purpose amplification and switching in demanding environments. The JANS2N2905A is qualified to MIL-PRF-19500/290 and operates across an extended temperature range of -65°C to 200°C. It is supplied in a TO-39 metal can package, facilitating through-hole mounting. Key parameters include a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a Vce saturation of 1.6V at 50mA and 500mA. This component finds application in aerospace, defense, and industrial sectors requiring robust semiconductor performance.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/290 |
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