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JANS2N2905

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JANS2N2905

TRANS PNP 60V 1UA TO39

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANS2N2905 is a PNP bipolar junction transistor (BJT) designed for high-reliability applications. This component features a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 600mA. It offers a power dissipation of 800mW and a low collector cutoff current of 1µA. The DC current gain (hFE) is a minimum of 100 at 150mA collector current and 10V collector-emitter voltage. Saturation voltage (Vce Sat) is a maximum of 1.6V at 50mA base current and 500mA collector current. The JANS2N2905 is housed in a TO-39 (TO-205AD) metal can package, suitable for through-hole mounting. This device meets MIL-PRF-19500/290 qualification, indicating its suitability for demanding military and aerospace environments. It operates within an extended temperature range of -65°C to 200°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageTO-39 (TO-205AD)
GradeMilitary
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max800 mW
QualificationMIL-PRF-19500/290

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