JANS2N2905
TRANS PNP 60V 1UA TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANS2N2905 is a PNP bipolar junction transistor (BJT) designed for high-reliability applications. This component features a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 600mA. It offers a power dissipation of 800mW and a low collector cutoff current of 1µA. The DC current gain (hFE) is a minimum of 100 at 150mA collector current and 10V collector-emitter voltage. Saturation voltage (Vce Sat) is a maximum of 1.6V at 50mA base current and 500mA collector current. The JANS2N2905 is housed in a TO-39 (TO-205AD) metal can package, suitable for through-hole mounting. This device meets MIL-PRF-19500/290 qualification, indicating its suitability for demanding military and aerospace environments. It operates within an extended temperature range of -65°C to 200°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/290 |
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